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1/12 february 2002 stp11nm60 - STP11NM60FP stb11nm60 - stb11nm60-1 n-channel 600v - 0.4 w -11a to-220/to-220fp/d 2 pak/i 2 pak mdmesh ? power mosfet (*)limited only by maximum temperature allowed (1)i sd <11a, di/dt<400a/ m s, v dd STP11NM60FP stb11nm60 stb11nm60-1 600 v 600 v 600 v 600 v < 0.45 w < 0.45 w < 0.45 w < 0.45 w 11 a 11 a 11 a 11 a symbol parameter value unit stp(b)11nm60(-1) STP11NM60FP v ds drain-source voltage (v gs =0) 600 v v dgr drain-gate voltage (r gs =20k w ) 600 v v gs gate- source voltage 30 v i d drain current (continuos) at t c =25 c 11 11 (*) a i d drain current (continuos) at t c = 100 c 7 7 (*) a i dm ( l ) drain current (pulsed) 44 44 (*) a p tot total dissipation at t c =25 c 160 35 w derating factor 0.88 0.28 w/ c dv/dt(1) peak diode recovery voltage slope 15 v/ns v iso insulation winthstand voltage (dc) -- 2500 v t stg storage temperature 65 to 150 c t j max. operating junction temperature 150 c to-220 1 2 3 1 2 3 i 2 pak 1 2 3 to-220fp 1 3 d 2 pak internal schematic diagram
stp11nm60 / STP11NM60FP / stb11nm60 / stb11nm60-1 2/12 thermal data avalanche characteristics electrical characteristics (tcase = 25 c unless otherwise specified) off on (1) dynamic 1. pulsed: pulse duration = 300 m s, duty cycle 1.5 %. 2. c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss . to-220/d 2 pak/i 2 pak to-220fp rthj-case thermal resistance junction-case max 0.78 3.57 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 5.5 a e as single pulse avalanche energy (starting t j =25 c, i d =i ar ,v dd =50v) 350 mj symbol parameter test condition s min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m a, v gs = 0 600 v i dss zero gate voltage drain current (v gs =0) v ds = max rating 1 m a v ds = max rating, t c = 125 c 10 m a i gss gate-body leakage current (v ds =0) v gs = 30v 100 na symbol parameter test condition s min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs ,i d = 250 m a 345v r ds(on) static drain-source on resistance v gs = 10v, i d = 5.5a 0.4 0.45 w symbol parameter test condition s min. typ. max. unit g fs (1) forward transconductance v ds >i d(on) xr ds(on)max, i d = 5.5a 5.2 s c iss input capacitance v ds = 25v, f = 1 mhz, v gs =0 1000 pf c oss output capacitance 230 pf c rss reverse transfer capacitance 25 pf c oss eq. (2) equivalent output capacitance v gs =0v,v ds = 0v to 480v 100 pf r g gate input resistance f=1 mhz gate dc bias = 0 test signal level = 20mv open drain 1.6 w
3/12 stp11nm60 / STP11NM60FP / stb11nm60 / stb11nm60-1 electrical characteristics (continued) switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 m s, duty cycle 1.5 %. 2. pulse width limit ed by safe operating area. symbol parameter test condition s min. typ. max. unit t d(on) turn-on delay time v dd = 300v, i d = 5.5a r g = 4.7 w v gs = 10v (see test circuit, figure 3) 20 ns t r rise time 20 ns q g total gate charge v dd = 400v, i d = 11a, v gs = 10v 30 nc q gs gate-source charge 10 nc q gd gate-drain charge 15 nc symbol parameter test conditions min. typ. max. unit t r(voff) off-voltage rise time v dd = 400v, i d = 11a, r g = 4.7 w, v gs =10v (see test circuit, figure 5) 6ns t f fall time 11 ns t c cross-over time 19 ns symbol parameter test condition s min. typ. max. unit i sd source-drain current 11 a i sdm (2) source-drain current (pulsed) 44 a v sd (1) forward on voltage i sd = 11a, v gs =0 1.5 v t rr reverse recovery time i sd = 11a, di/dt = 100a/ m s, v dd = 100v, t j = 150 c (see test circuit, figure 5) 390 ns q rr reverse recovery charge 3.8 m c i rrm reverse recovery current 20 a safe operating area for to-220/d2pak/i2pak safe operating area for to-220fp
stp11nm60 / STP11NM60FP / stb11nm60 / stb11nm60-1 4/12 transconductance static drain-source on resistance transfer characteristics output characteristics thermal impedance for to-220fp thermal impedance for to-220/d2pak/i2pak
5/12 stp11nm60 / STP11NM60FP / stb11nm60 / stb11nm60-1 source-drain diode forward characteristics normalized on resistance vs temperature normalized gate thereshold voltage vs temp. capacitance variations gate charge vs gate-source voltage
stp11nm60 / STP11NM60FP / stb11nm60 / stb11nm60-1 6/12 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load
7/12 stp11nm60 / STP11NM60FP / stb11nm60 / stb11nm60-1 dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 l6 a c d e d1 f g l7 l2 dia. f1 l5 l4 h2 l9 f2 g1 to-220 mechanical data p011c
stp11nm60 / STP11NM60FP / stb11nm60 / stb11nm60-1 8/12 dim. mm inch min. typ. max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 0.385 0.417 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 3 3.2 0.118 0.126 l2 a b d e h g l6 ? f l3 g1 123 f2 f1 l7 l4 to-220fp mechanical data
9/12 stp11nm60 / STP11NM60FP / stb11nm60 / stb11nm60-1 1 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.393 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.625 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.068 m 2.4 3.2 0.094 0.126 r 0.4 0.015 v2 0? 8? d 2 pak mechanical data 3
stp11nm60 / STP11NM60FP / stb11nm60 / stb11nm60-1 10/12 dim. mm inch min. typ. max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 e 2.4 2.7 0.094 0.106 e 10 10.4 0.393 0.409 l 13.1 13.6 0.515 0.531 l1 3.48 3.78 0.137 0.149 l2 1.27 1.4 0.050 0.055 l l1 b2 b d e a c2 c a1 l2 e p011p5/e to-262 (i 2 pak) mechanical data
11/12 stp11nm60 / STP11NM60FP / stb11nm60 / stb11nm60-1 tape and reel shipment (suffix ot4o)* tube shipment (no suffix)* d 2 pak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0.075 0.082 r 50 1.574 t 0.25 0.35 0.0098 0.0137 w 23.7 24.3 0.933 0.956 tape mechanical data
stp11nm60 / STP11NM60FP / stb11nm60 / stb11nm60-1 12/12 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specification mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. the st logo is a trademark of stmicroelectronics ? 2000 stmicroelectronics printed in italy all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com

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